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Dislocation mobilities in III–V compounds InSb and GaAs: a TEM in situ study
| Content Provider | Scilit |
|---|---|
| Author | Caillard, D. Clément, N. Couret, A. Androussi, Y. Lefebvre, A. Vanderschaeve, G. |
| Copyright Year | 2021 |
| Description | The velocities of dislocations have been measured in the vicinity of sources, at 180°C in undoped InSb and at 350°C in semi-insulating undoped GaAs. For a constant local stress the velocity of dislocations is proportional to their length, with no indication of a maximum velocity in the investigated range in InSb and experimental evidence for a maximum velocity of screw dislocations in GaAs. No significant difference can be detected between the velocity of 3 and screw dislocations. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 366 |
| Page Count | 6 |
| Starting Page | 361 |
| DOI | 10.1201/9781003069621-58 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-31 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Insb Stress Gaas Undoped Screw Dislocations Vicinity Experimental Tem Proportional |
| Content Type | Text |
| Resource Type | Chapter |