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Bulk and surface defects in implanted and annealed GaAs
| Content Provider | Scilit |
|---|---|
| Author | Bellon, P. Chevalier, J. P. Martin, G. Deconinck, P. Maluenda, J. |
| Copyright Year | 2021 |
| Description | Bulk and surface defects in Se and Si implanted and annealed GaAs have been studied by Transmission Electron Microscopy. Bulk defects have been found to be interstitial dislocation loops which contain a number of atoms slightly below the implanted dose. Stacking fault tetrahedra have been observed close to or at the surface in Se, but not in Si, implanted and annealed specimens, where other surface defects are present. Possible formation mechanisms are discussed. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 314 |
| Page Count | 6 |
| Starting Page | 309 |
| DOI | 10.1201/9781003069621-50 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Nuclear Energy and Engineering Dislocation Surface Defects Interstitial Tetrahedra Implanted and Annealed Slightly |
| Content Type | Text |
| Resource Type | Chapter |
