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Defect structure of epitaxial films grown on porous silicon
| Content Provider | Scilit |
|---|---|
| Author | Baumgart, H. Phillipp, F. Celler, George |
| Copyright Year | 2020 |
| Description | Porous silicon layers were formed by anodic dissolution in hydrofluoric acid. The resulting low density porous material keeps the single crystalline structure. We have investigated the epitaxial growth of Si films on porous substrates by Nd:YAG laser fusion and molecular beam epitaxy (MBE). Microscopical analysis by TEM reveals single crystalline epitaxial films with grown-in defects. The underlying porous substrate can subsequently be oxidized to provide vertical dielectric isolation from the Si wafer. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-34&format=pdf |
| Ending Page | 228 |
| Page Count | 6 |
| Starting Page | 223 |
| DOI | 10.1201/9781003069614-34 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Applied Physics Structure Single Crystalline Films Grown Porous Substrates Epitaxial Films with Grown |
| Content Type | Text |
| Resource Type | Chapter |