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SEM developments in semiconductor characterization
| Content Provider | Scilit |
|---|---|
| Author | Fontaine, G. Morin, P. Pitaval, M. |
| Copyright Year | 2020 |
| Description | Electron-channelling imaging is a new mode of operation of the SEM which has been developed in our laboratory and applied to the characterization of semiconductors. Images of extended crystalline defects in solid samples are observed with low-loss backscattered electrons. The explored depth beneath the surface is around 100 nm and the resolution about 10 nm. Polishing the samples at a small angle from the original surface makes it possible to examine different depths. The observations reported here concern extended defects in various silicon samples and (Ga-In)As graded epitaxial layers. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-33&format=pdf |
| Ending Page | 222 |
| Page Count | 10 |
| Starting Page | 213 |
| DOI | 10.1201/9781003069614-33 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Microscopic Research Silicon Resolution Semiconductor Polishing Crystalline Graded Epitaxial Backscattered |
| Content Type | Text |
| Resource Type | Chapter |
