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Interface structure and epitaxial growth of M-plane GaN(11̅00) on tetragonal LiA1O2(100) substrates
| Content Provider | Scilit |
|---|---|
| Author | Trampert, A. Liu, T. Waitereit, P. Brandt, O. Ploog, K. H. |
| Copyright Year | 2018 |
| Description | We report on the atomic interface structure of epitaxially grown hexagonal α-GaN(11̅00) layers on tetragonal $γ-LiA1O_{2}$(100) substrates by means of transmission electron microscopy. The novel epitaxial orientation relationship verified by electron diffraction is given by (11̅00)GaN parallel to $(100)LiAlO_{2}$ and [112̅0]GaN parallel to $[001]LiAlO_{2}$. The interface structure that controls the heteroepitaxial growth is studied by high-resolution electron microscopy. We propose a simple model for the interfacial atomic arrangement, in which strain and chemistry contributions are considered, and we discuss it with respect to the other epitaxial orientation found in the literature for this hetero-system. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-58&type=chapterpdf |
| Ending Page | 280 |
| Page Count | 4 |
| Starting Page | 277 |
| DOI | 10.1201/9781351074629-58 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Cultural Studies Epitaxial Lialo2 Lia1o2 Substrates Parallel Tetragonal Interface Structure |
| Content Type | Text |
| Resource Type | Chapter |
