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TEM characterization of the defect structure in GaAs layers grown on Si substrates by MBE
| Content Provider | Scilit |
|---|---|
| Author | Bruce, R. Mandeville, P. Springthorpe, A. J. Miner, C. J. |
| Copyright Year | 2021 |
| Description | The effect of growth temperature on the defect structure of GaAs grown on Si by MBE has been investigated. An examination of the layers using TEM cross sections has shown that a growth temperature of 585°C produces a GaAs layer with the lowest dislocation density and best PL intensity. Biaxial tensile stress, produced as the initial recrystallized GaAs layer is cooled to the growth temperature or as the completed layer structure is cooled to room temperature was measured using X-ray diffraction and is believed to be the cause of the increased defect density in the GaAs. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 116 |
| Page Count | 6 |
| Starting Page | 111 |
| DOI | 10.1201/9781003069621-18 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Characterization and Testing of Materials Stress Defect Structure Cooled Gaas Layer |
| Content Type | Text |
| Resource Type | Chapter |
