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Characterization of silicon-on-insulator structures produced by nitrogen ion implantation
| Content Provider | Scilit |
|---|---|
| Author | Fan, T. W. Yuan, J. Brown, L. M. |
| Copyright Year | 2021 |
| Description | Silicon crystals implanted with a high-dose of nitrogen at 300keV have been thermally annealed to produce a silicon-on-insulator (SOI) structure. Depth profiles of the nitrogen to silicon ratios were obtained by EELS from both as-implanted and annealed cross-sectional samples. The elemental ratios, although subject to uncertainty because of radiation damage and other instrumental factors, are confirmed by use of a $Si_{3}N_{4}$ standard. Together with information from near edge structure in the core loss and from the valence excitation of EELS spectra, they provide a characterization of the SOI structures, including evidence for gaseous nitrogen in the porous regions of the annealed samples. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 426 |
| Page Count | 6 |
| Starting Page | 421 |
| DOI | 10.1201/9781003069621-67 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Applied Physics Nitrogen Silicon Crystals Structures Spectra Elemental Implanted Thermally |
| Content Type | Text |
| Resource Type | Chapter |
