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TEM studies of high-dose oxygen implanted silicon annealed at 1405°C
| Content Provider | Scilit |
|---|---|
| Author | Marsh, C. D. Hutchison, J. L. Booker, G. R. Reeson, K. J. Hemment, P. L. F. Celler, G. K. |
| Copyright Year | 2021 |
| Description | HREM studies have been performed on high-dose oxygen implanted silicon subsequently annealed at 1405°C. For specimens implanted with $1·8×10^{18}$ $0^{+}/cm^{2}$, the upper silicon layer was free from oxide particles and contained a low density of dislocations. The buried oxide was continuous with planar interfaces. For specimens implanted with $0·25×10^{18}$ $0^{+}/cm^{2}$, two bands of oxide particles were present, one located close to the damage peak, and the other close to the oxygen peak. For specimens implanted with $0·6×10^{18}$ $0^{+}/cm^{2}$, a continuous buried layer was formed. |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 414 |
| Page Count | 6 |
| Starting Page | 409 |
| DOI | 10.1201/9781003069621-65 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Applied Physics Dislocations Planar Annealed Implanted Silicon Oxygen Implanted |
| Content Type | Text |
| Resource Type | Chapter |
