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Characterization of TiN films obtained by ion implantation
| Content Provider | Scilit |
|---|---|
| Author | Armigliato, A. Garulli, A. Govoni, D. Ostoja, P. |
| Copyright Year | 2020 |
| Description | Titanium nitride films have been prepared by implanting $N_{2} ^{+}$ions in titanium layers deposited on silicon single crystals. The electrical resistivity and the optical properties of such films are better, even in the as-implanted form, than the ones obtained by evaporation and sputtering techniques. Thermal treatments performed in vacuum or in $H_{2}$, as well as by electron beam, improved the electrical resistivity, whereas transient annealing by incoherent light resulted in better optical properties. The applicability of these films as a conductive and/or transparent material is now under investigation. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-76&format=pdf |
| Ending Page | 506 |
| Page Count | 6 |
| Starting Page | 501 |
| DOI | 10.1201/9781003069614-76 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Microscopic Research Implantation |
| Content Type | Text |
| Resource Type | Chapter |
