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Study of high dose oxygen implanted and annealed silicon wafers by electron microscopy
| Content Provider | Scilit |
|---|---|
| Author | Veirman, A. De Yallup, K. Landuyt, J. Van Maes, H. E. Amelinckx, S. |
| Copyright Year | 2021 |
| Description | Results are discussed of a high voltage and high resolution transmission electron microscopy study of SIMOX (Separation by IMplanted OXygen) structures. After thermal annealing the superficial silicon layer contains dislocations and both amorphous and crystalline precipitates. The amorphous oxide precipitates have a spheroidal shape and dissolve under prolonged high temperature annealing, which is explained by considering an expression for the critical radius. The polyhedral crystalline precipitates are identified as cubic SiC. They are due to carbon contamination during ion implantation. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 408 |
| Page Count | 6 |
| Starting Page | 403 |
| DOI | 10.1201/9781003069621-64 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Microscopic Research Contamination High Voltage Annealing Amorphous Implantation Structures Implanted Oxygen Crystalline Precipitates |
| Content Type | Text |
| Resource Type | Chapter |