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| Content Provider | IET Digital Library |
|---|---|
| Author | Yadav, Dharmendra Singh Sharma, Dheeraj Kumar, Ashish Rathor, Deepak Agrawal, Rahul Tirkey, Sukeshni Raad, Bhagwan Ram Bajaj, Varun |
| Abstract | The charge plasma-based tunnel field-effect transistor (TFET) has been seen as the potential candidate to replace the conventional TFET as it offers fabrication simplicity and its proficiency to be used for ultra-low-power applications. A charge plasma TFET (CPTFET) with hetero materials for enhancement of device performance is presented. For this, a narrow bandgap material (InAs) is used instead of silicon in source region for reducing the lateral tunnelling distance at the source/channel interface. The reduced tunnelling width at the source/channel junction enables higher band-to-band tunnelling generation rate, thus the device offers higher ON-state current. In this context, a comparative study of CPTFET and hetero junction charge plasma TFET (H-CPTFET) has been performed in terms of transfer characteristic (I ds–V gs), transconductance (g m ), gate-to-drain capacitance (C gd), cut-off frequency (f T) and gain-bandwidth product. In addition to this, the effect of variation in channel length (L g) and drain to source voltage (V ds) on the DC and analogue/radio frequency performance of H-CPTFET is also analysed. |
| Starting Page | 358 |
| Ending Page | 363 |
| Page Count | 6 |
| Volume Number | 12 |
| e-ISSN | 17500443 |
| Issue Number | Issue 6, Jun (2017) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/12/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2016.0688 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2017-06-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Band-to-band Tunnelling Generation Rate Channel Length Variation Effect CPTFET Cut-off Frequency Device Performance Enhancement Drain to Source Voltage Elemental Semiconductor Field Effect Device Field Effect Transistors Gain-Bandwidth Product Gate-to-drain Capacitance H-CPTFET Hetero Junction Charge Plasma TFET Hetero Material-based Charge Plasma TFET III-V SemiConductor InAs-Si Indium Compound Lateral Tunnelling Distance Reduction Low Power Electronics Narrow Band Gap SemiConductor Narrow Bandgap Material ON-state Current Semiconductor Junction Source Region Source-channel Interface Source-channel Junction Transconductance Transfer Characteristic Tunnel Held-effect Transistor Tunnel Transistors Ultra-low-power Application |
| Content Type | Text |
| Resource Type | Article |
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