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| Content Provider | IET Digital Library |
|---|---|
| Author | Alam, Khairul |
| Abstract | The physics and performance of monolayer MX2 heterojunction n TFETs are studied using a quantum simulation. The imaginary wave vector reveals that WTe2 is the most promising source material. Results of heterojunction TFETs with WTe2 source material and of WTe2 homojunction TFET reveal that WTe2–MoS2 heterojunction TFET is the most promising candidate with a 620 μA/μm drive current for a 0.3 volt gate swing. The energy gap between the valence band of source material and the conduction band of channel material, δ E cv , is the key parameter for high drive current. The WTe2–MoS2 heterojunction has the smallest δ E cv value that results in small band bending near the heterojunction, which creates the shortest tunnel path and therefore yields the highest drive current. The WTe2–MoS2 TFET has an average turn-on slope of 15.6 mV/dec, an on/off current ratio of 6.2 × 10 8 , a drive current of 620 μA/μm, a transconductance of 10.98 mS/μm, a total capacitance of 0.829 fF/μm, a switching delay of 0.401 ps, and a cutoff frequency of 2.1 THz. The performance metrics closely comply with the ITRS 2026 LOP and LSTP device requirements. Its I 60 value of 11.97 μA/μm is large enough to compete with MOSFETs. |
| Starting Page | 81 |
| Ending Page | 85 |
| Page Count | 5 |
| Volume Number | 15 |
| e-ISSN | 17500443 |
| Issue Number | Issue 2, Feb (2020) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/15/2 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2019.0588 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2020-02-05 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Band to Band Tunnelling Band Tunnelling Channel Conduction Band Channel Material Complex E–k Curve Conduction Band Cut-off Frequency Doped Source Material Energy Gap Frequency 2.1 THz Heterojunction Tunnel Transistor High Drive Current High Electron Mobility Transistors Homojunction TFET Insulated Gate Field Effect Transistors Low Standby Power Device Requirements Metal Oxide Semiconductor Field-effect Transistors Molybdenum Compound MonoLayer Monolayer MX2 Heterojunction N-channel Tunnelling Field-effect Transistors Monolayer MX2 Heterojunction TFET MOSFET Performance Metrics Quantum Simulation Reference Independent Figure of Merit Relative Small Junction Field Semiconductor Doping Semiconductor Heterojunction Shortest Tunnel Path Small Band Bending Source Valence Band Switching Delay Time 0.401 Ps Tungsten Compound Tunnel Transistors Tunnelling Valence Band Vector Plots Voltage 0.3 V Voltage 15.6 MV WTe2-MoS2 |
| Content Type | Text |
| Resource Type | Article |
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