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| Content Provider | IET Digital Library |
|---|---|
| Author | Beohar, Ankur Yadav, Nandakishor Vishvakarma, Santosh Kumar |
| Abstract | A unique design for an asymmetrical underlap (AU) cylindrical-gate-all-around (GAA)-n-tunnel field effect transistor (TFET) based on hetero-spacer engineering with trap-assisted tunnelling (TAT) for reliability concern is proposed and validated. Here, DC and analogue performances such as I ON, I OFF, SS, I ON /I OFF, C gs, and C gd have been investigated, while included TAT model and compared the examined device with AU GAA-TFET based on homo-spacer (HS) dielectric. On the basis of observation, the proposed device increases ON current as high as 2.1 × 10−6 A/µm, which corresponds to 1024 times improvement in I ON /I OFF when compared with device based on HS. It also suppresses ambipolar behaviour with fast switching ON–OFF transition due to low leakage current (I OFF). These performances are mainly produced due to AU and low-k spacer dielectric which is replaced by high-k dielectric over source side spacer of the device, whereas drain side spacer is placed with high-k material along with increase in series resistance across drain–channel junction caused by drain underlap. Low-k spacer reduces the fringing field, and the depletion does not form at the source–gate edge, hence high source–channel tunnelling junction. |
| Starting Page | 982 |
| Ending Page | 986 |
| Page Count | 5 |
| Volume Number | 12 |
| e-ISSN | 17500443 |
| Issue Number | Issue 12, Dec (2017) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/12/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0311 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2017-12-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Ambipolar Behaviour Suppression Analogue Performance Asymmetrical Underlap 3D-cylindrical GAA-TFET AU Cylindrical-gate-all-around N-tunnel Field Effect Transistor Dielectric Material Dielectric Material And Property Drain Side Spacer Drain-channel Junction Fast Switching ON-OFF Transition Field Effect Device Field Effect Transistors HeteroSpacer Dielectric Engineering High-k Dielectric Spacer Material HS Dielectric Engineering Leakage Current Low-k Spacer Dielectric Reliability Semiconductor Device Reliability Series Resistance Source Side Spacer Source-channel Tunnelling Junction TAT Analysis Trap-assisted Tunnelling Analysis Tunnelling |
| Content Type | Text |
| Resource Type | Article |
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