NDLI: High dielectric material dependence of carbon nanotube field effect transistor considering non-ballistic conduction

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The Journal of Engineering

High dielectric material dependence of carbon nanotube field effect transistor considering non-ballistic conduction

Content Provider	IET Digital Library
Author	Rouf, Nirjhor Tahmidur Deep, Ashfaqul Haq Hassan, Rusafa Binte Khan, Sabbir Ahmed Hasan, Mahmudul Mominuzzaman, Sharif Mohammad
Abstract	As a result of this reported research, a simulation model to analyse the behaviour of carbon nanotube field effect transistors (CNTFETs) under non-ballistic conditions is explained and the effect of gate dielectric on the performance of CNTFETs has been explored in detail. For the first time, a thorough study of the combined non-ballistic effect on the performance of CNTFETs has been conducted and the output of the device has been analysed. It has been observed that a gate material with a high dielectric constant leads to higher on-state current and higher on and off state current ratio. In addition, the transconductance, total capacitance, charging energy, subthreshold swing (S), drain-induced barrier lowering (DIBL) and gain with respect to the dielectric constant have been observed and analysed. Transconductance and total capacitance increases by a significant amount, while charging energy and S decrease as the dielectric value increases. The DIBL and gain vary slightly as a higher value dielectric material is used as a gate. Furthermore, the results of this study have been plotted against previously reported ballistic outputs to provide a better perception of the deviation from ideal behaviour. At the same time, the outcomes of this analysis have been compared against some reported experimental values.
Starting Page	620
Ending Page	625
Page Count	6
Volume Number	9
e-ISSN	17500443
Issue Number	Issue 10, Oct (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/9/10
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0268
Journal	Micro & Nano Letters
Publisher Date	2014-08-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Carbon Nanotube Field Effect Transistor Carbon Nanotube Field Effect Transistors Carbon Nanotubes Charging Energy CNTFET DIBL Dielectric Constant Dielectric Device Dielectric Material Dielectric Material And Property Drain-induced Barrier Lowering Field Effect Device Fullerene Gate Dielectric Effect High Dielectric Material Dependence Nanotube And Related Device Nonballistic Conduction Off State Current Ratio On-state Current Ratio Subthreshold Swing
Content Type	Text
Resource Type	Article

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