NDLI: Design and development of memristor-based RRAM

Content Provider	IET Digital Library
Author	Pal, Soumitra Gupta, Vivek Ki, Wing Hung Islam, Aminul
Abstract	A power- and variability-aware non-volatile resistive random access memory (RRAM) cell is presented. Non-volatility is achieved due to the use of a memristor as a memory element, which when integrated with a carbon nanotube field-effect transistor (CNFET) helps achieve tremendous robustness against process variation. The half-select issue, inherent in the 2T2M RRAM cell (state-of-the-art design based on the memristor) have been resolved and its circuit parameters have been compared with those of the proposed cell. Also, the proposed cell has been compared with the standard 6T SRAM (S6T) cell. The proposed cell shows 1.6×/4.08× narrower read delay/write delay variability compared with 2T2M. 5CNFET2M also shows 1.8× narrower read delay variability than that of S6T. Furthermore, the proposed cell shows 6.9× shorter write delay in comparison with the 2T2M RRAM cell. 5CNFET2M consumes 106×/1.34× lower power during hold mode compared with the conventional 6T static random access memory/2T2M RRAM cell. Furthermore, the proposed cell also shows improvement in hold power variability compared with both the cells. All the simulated data, presented here are at the nominal supply voltage of 1 V. These improvements are gained at the expense of slightly longer read time compared with 2T2M/S6T and 31.3× longer write delay compared with S6T.
Starting Page	548
Ending Page	557
Page Count	10
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 4, Jul (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5388
Journal	IET Circuits, Devices & Systems
Publisher Date	2019-02-04
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Carbon Nanotube Field Effect Transistors Carbon Nanotube Field-effect Transistor CNFET Conventional 6T Static Random Access Memory-2T2M RRAM Cell Digital Circuit Design, Modelling And Testing Electrical/electronic Equipment Energy Utilisation Environmental Aspects of Computing Field Effect Transistor Circuit Hold Power Variability Integrated Circuit Design Layout Memory Circuit Memory Element Memristor Circuit Memristor-based RRAM Design Modelling And Testing Narrower Read Delay Variability Power Aware Computing Power-aware Non-volatile Resistive Random Access Memory Cell Process Variation Read Delay Variability Resistive RAM Semiconductor Integrated Circuit Design Semiconductor Storage SRAM Chips Standard 6T SRAM Cell Variability-aware Nonvolatile Resistive Random Access Memory Cell Voltage 1 V
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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