Please wait, while we are loading the content...
Please wait, while we are loading the content...
| Content Provider | IET Digital Library |
|---|---|
| Author | Seok, O. Ahn, W. Han, M. K. Ha, M. W. |
| Abstract | Proposed is a new extended gate towards a source in AlGaN/GaN metal-oxide-semiconductor–high-electron-mobility transistors (MOS-HEMTs) in order to increase breakdown voltage and reduce on-resistance. The TaN gate was isolated from the source by a 15 nm-thick RF-sputtered HfO2 gate insulator. A high breakdown voltage of 1410 V was measured as a result of the successfully blocked gate leakage current and surface passivation by the HfO2 gate insulator. The extended gate towards the source was an effective method to improve the on-resistance and drain current density by eliminating the gate-source space. The proposed device with the extended gate exhibited low specific on-resistance of 2.28 mΩ·cm2 while that of the MOS-HEMT with the conventional structure was 2.91 mΩ·cm2. Also, maximum drain current density at the VGS of 2 V was increased from 332 to 420 mA/mm by the proposed extended TaN gate. |
| Starting Page | 425 |
| Ending Page | 427 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 49 |
| e-ISSN | 1350911X |
| Issue Number | Issue 6, Mar (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.0149 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AlGaN-GaN Aluminium Compound Blocked Gate Leakage Current Blocked Gate Leakage Surface Current Density Drain Current Density Extended Gate Gallium Compound Hafnium Compound High-breakdown Voltage III-V SemiConductor Insulated Gate Field Effect Transistors Insulator Metal-oxide-semiconductor-high-electron-mobility Transistors MOS-HEMT On-resistance Density Power MOSFET Power Semiconductor Device RF-sputtered Gate Insulator Silicon Tantalum Compound Voltage 1410 V Voltage 2 V Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
| Sl. | Authority | Responsibilities | Communication Details |
|---|---|---|---|
| 1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
| 2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
| 3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
| 4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
| 5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
| 6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
| 7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
| 8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
| 9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
|
Loading...
|