NDLI: Snap-back free shorted-anode super-junction TCIGBT

Please wait, while we are loading the content...

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Gain-scheduled constrained state feedback control of DC–DC buck power converter

Guest Editorial: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016)

Improvement of an electro-thermal model of SiC MPS diodes

Load-independent harmonic mitigation in SCR-fed three-phase multiple adjustable speed drive systems with deliberately dispatched firing angles

Low-frequency harmonic resonance analysis and suppression method of modular multilevel converter

Matrix pencil method-based reference current generation for shunt active power filters

Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors

Modified hybrid model of boost converters for parameter identification of passive components

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

Overcoming switching limits in silicon power MOSFETs with silicon-based solutions

Progress in IGBT development

Real-time gating signal generation and performance analysis for fully controlled five-phase, ten-pulse, line-commutated rectifier

Reverse-recovery of diamond p-i-n diodes

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Simplified transformer-based multilevel inverter topology and generalisations for renewable energy applications

Single-phase hybrid cascaded H-bridge and diode-clamped multilevel inverter with capacitor voltage balancing

Snap-back free shorted-anode super-junction TCIGBT

Volume 11 (2018) : Issue 3, Mar

Volume 11 (2018) : Issue 2, Feb

Volume 11 (2018) : Issue 1, Jan

IET Quantum Communication

IET Radar, Sonar & Navigation

IET Renewable Power Generation

IET Science, Measurement & Technology

IET Signal Processing

IET Wireless Sensor Systems

Micro & Nano Letters

The Journal of Engineering

Snap-back free shorted-anode super-junction TCIGBT

Content Provider	IET Digital Library
Author	Luo, Peng Sweet, Mark Narayanan, Ekkanath Madathil Sankara
Abstract	A novel structure called the shorted-anode super-junction trench clustered insulated gate bipolar transistor (SA-SJ-TCIGBT) is proposed and demonstrated through numerical simulations in 1.2 kV, field-stop technology. This device is based on the SJ-TCIGBT concept. In the SA-SJ-TCIGBT structure, due to the introduction of a segmented n+-anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap back in the current–voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two-dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the SA structure during turn-off process.
Starting Page	654
Ending Page	659
Page Count	6
ISSN	17554535
Volume Number	11
e-ISSN	17554543
Issue Number	Issue 4, Apr (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/11/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2017.0407
Journal	IET Power Electronics
Publisher Date	2017-09-14
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anode Bipolar Transistor Current-voltage Characteristic Excess Electrons Field-stop Technology Forward Conducting Mode Forward Voltage Drop Freewheeling Diode Mode Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Overshoot Voltage Power Semiconductor Device Power Semiconductor Switches SA-SJ-TCIGBT Structure Segmented N+-anode Shorted-anode Super-junction TCIGBT Shorted-anode Super-junction Trench Clustered Insulated Gate Bipolar Transistor Snap-back Free TCIGBT Switch off Energy Loss Switching Energy Loss Tail Current Voltage 1.2 KV
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Reverse conducting lateral insulated-gate bipolar transistors with a non-local band-to-band tunnelling junction

Low on-state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode

Snapback-free reverse conducting IGBT with p-float and n-ring surrounding trench-collector

Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate

Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot

Snapback-free reverse conducting IGBT with p-poly trench-collectors

Snapback-free reverse-conducting IGBT with low turnoff loss

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Snap-back free shorted-anode super-junction TCIGBT

Similar Documents

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Reverse conducting lateral insulated-gate bipolar transistors with a non-local band-to-band tunnelling junction

Low on-state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode

Snapback-free reverse conducting IGBT with p-float and n-ring surrounding trench-collector

Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate

Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot

Snapback-free reverse conducting IGBT with p-poly trench-collectors

Snapback-free reverse-conducting IGBT with low turnoff loss

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Snap-back free shorted-anode super-junction TCIGBT