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Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Content Provider	IET Digital Library
Author	Santi, Carlo De Meneghini, Matteo Meneghesso, Gaudenzio Zanoni, Enrico
Abstract	GaN-based transistors are promising devices for power switching applications, but their unique properties require careful design of the circuit in order to achieve the best performance and reliability. The first part will focus on the characterisation of deep-level effects in enhancement- and depletion-mode HEMTs, which limit the performance of the transistor. Threshold voltage instabilities in MIS-HEMT structures, caused by charge trapping under the gate, and their dependence on SiN acting as the gate dielectric will be reviewed. ON-resistance increase, caused by charge trapping in the gate–drain access region, will then be discussed in normally off gate injection transistors, as well as the effect of the switching frequency on the trapping–de-trapping equilibrium condition. The second part of the paper will discuss possible failure modes related to operating conditions, starting with the oxidation of the surface and the inverse piezoelectric effect at high gate–drain voltage. To have a complete picture of high-field effects, the gate dielectric and passivation robustness will be investigated. Time-dependent degradation will then be analysed in both gate reverse and forward-bias conditions. Finally, failures related to off-state stress and to power dissipation and electric field during an ESD event in AlGaN/GaN-HEMTs will be discussed.
Starting Page	668
Ending Page	674
Page Count	7
ISSN	17554535
Volume Number	11
e-ISSN	17554543
Issue Number	Issue 4, Apr (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/11/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2017.0403
Journal	IET Power Electronics
Publisher Date	2017-10-04
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Charge Trapping Deep-level Effects Depletion Reliability Depletion-mode High Electron Mobility Transistors Dynamic Effects Electric Field Electrostatic Discharge Electrostatic Discharge Event Electrostatics Enhancement Gallium Nitride HEMT Enhancement-mode High Electron Mobility Transistors Failure Analysis Failure Mode Field Effect Device Gallium Compound Gallium Nitride-based Transistors Gate Dielectric Gate Injection Transistors III-V SemiConductor Inverse Piezoelectric Effect MIS-HEMT Structure Nitrogen Compound Off-state Stress Oxidation Passivation Passivation Robustness Piezoelectric And Ferroelectric Material Piezoelectricity Power Dissipation Power HEMT Power Semiconductor Device Power Semiconductor Switches Power Switching Application Relay And Switches Reliability Semiconductor Technology Silicon Compound Silicon Nitride Surface Oxidation Surface Topography Measurement Switching Circuit Threshold Voltage Instabilities Time-dependent Degradation Trapping-de-trapping Equilibrium Condition
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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