NDLI: Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate

Content Provider	IET Digital Library
Author	Chen, Weizhong Li, Shun Huang, Yao Huang, Yi Han, Zheng Sheng
Abstract	A novel snapback-free and low-loss shorted-anode lateral insulated bipolar transistor (SA-LIGBT) based on silicon on insulator with self-driving auxiliary gate (SAG) in the anode is proposed, named as SAG-LIGBT. The SAG is characterised by metal oxide semiconductor (MOS) structure in the anode, and the gate of the MOS is shorted with the anode electrode, thus self-driving without extra gate signal is achieved. At anode voltage V A = 0, the P-base serving as a barrier to hinder electrons flowing into the N + anode. At V A = V on of the forward conduction, the P-base is depleted to intrinsic, and the anode resistance R SA is increased from R P-base to R intrinsic. At V A = V bus of the turn-off state, the P-base is fully depleted and an electron accumulation layer is formed under the SiO2, thus the R SA is decreased from R intrinsic to R n-channel to provide a low-resistance path for electron current. Consequently, the device not only eliminates the snapback effect but also reduces the turn-off energy loss E off. Therefore, a better trade-off is obtained between V on and E off. At the same V on, the E off of SAG-LIGBT is decreased by 57 and 66% compared with separated shorted-anode LIGBT (SSA-LIGBT) and SA-LIGBT, respectively. Moreover, the SAG-LIGBT exhibits the shorter T off of 80 ns than the SSA-LIGBT and vertical P-collector and N-buffer LIGBT at J A = 100 A/cm2.
Starting Page	3314
Ending Page	3318
Page Count	5
ISSN	17554535
Volume Number	13
e-ISSN	17554543
Issue Number	Issue 15, Nov (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/13/15
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.1491
Journal	IET Power Electronics
Publisher Date	2020-07-31
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anode Electrode Anode Resistance RSA Electron Accumulation Layer Electron Current Gate Signal Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Low-loss SAG-LIGBT Low-loss Shorted-anode Lateral Insulated Bipolar Transistor Low-resistance Path Metal Oxide Semiconductor Structure MOS Structure N-buffer LIGBT P-base Serving SA-LIGBT Self-driving Auxiliary Gate Shorted-anode LIGBT Silicon on Insulator Silicon-on-insulator Snapback Effect Snapback-free SAG-LIGBT SSA-LIGBT Vertical P-collector LIGBT
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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