NDLI: Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications

Content Provider	IET Digital Library
Author	Jørgensen, Asger Bjørn Sønderskov, Simon Heindorf Beczkowski, Szymon Bidoggia, Benoît Nielsen, Stig Munk
Abstract	Medium voltage power supplies for applications such as electrostatic precipitators are used in industrial plants to remove particles from fumes. Current solutions based on silicon devices rely on high-voltage transformers to reach the required output voltage levels. New wide band gap materials such as silicon carbide have higher electric breakdown voltage, and thus fewer devices are required in series to withstand the output voltage. Owing to the faster switching speed of silicon carbide devices further demands are put on the serialisation method. In this study, a cascaded series-connection method using only a single external gate signal is analysed in detail, guidelines to size the resistor–capacitor–diode-snubber are proposed and its applicability is experimentally demonstrated. The circuit is tested with four series-connected devices in a double pulse test at 2400 V and current levels of 250–800 mA to show the load dependence. The serialisation technique is tested in a boost converter operating in discontinuous conduction mode but is limited to 1200 V due to an oscillating state occurring after zero current crossing. Finally, the technique is tested at 2400 V and 10 kHz in a synchronous boost converter, which demonstrates the proposed design guidelines.
Starting Page	413
Ending Page	419
Page Count	7
ISSN	17554535
Volume Number	13
e-ISSN	17554543
Issue Number	Issue 3, Feb (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/13/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0573
Journal	IET Power Electronics
Publisher Date	2019-09-10
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Cascaded Series-connection Method Cascaded Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors Current 250.0 MA to 800.0 MA Current Levels Discontinuous Conduction Mode Double Pulse Test Driver Circuit Electric Breakdown Voltage Electrostatic Precipitators Frequency 10.0 KHz High-voltage Transformer Industrial Plant Insulated Gate Field Effect Transistors Integrated Circuit Emphasis Simulation Junction And Barrier Diode Load Dependence Medium Voltage Application Medium Voltage Power Supplies MOSFET Other Power Apparatus And Electric Machine Output Voltage Levels Power Capacitor Power Converter Power Semiconductor Device Power Semiconductor Diode Power Semiconductor Switches Power Supplies to Apparatus Relay And Switches Resistor Resistor–capacitor–diode-snubber Semiconductor Device Breakdown Serialisation Method Series-connected Device SiC Silicon Silicon Carbide Device Silicon Compound Single External Gate Signal Single Gate Driver Snubbers Switching Converter Switching Speed Prediction Synchronous Boost Converter Voltage 1200.0 V Voltage 2400.0 V Wide Band Gap Material Wide Band Gap SemiConductor Zero Current Crossing
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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