NDLI: High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module

Content Provider	IET Digital Library
Author	Jørgensen, Asger Bjørn Aunsborg, Thore Stig Bęczkowski, Szymon Uhrenfeldt, Christian Nielsen, Stig Munk
Abstract	Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal–oxide–semiconductor field-effect transistors (MOSFETs), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.
Starting Page	475
Ending Page	482
Page Count	8
ISSN	17554535
Volume Number	13
e-ISSN	17554543
Issue Number	Issue 3, Feb (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/13/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0413
Journal	IET Power Electronics
Publisher Date	2019-06-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	ANSYS Q3D Extractor Design And Testing Dielectric Heating Driver Circuit Equivalent Circuit Fast Voltage Switching Capabilities Frequency 1.0 MHz Gate Driver Gate Loss Hard-switched Application High Thermally Conductive Design High-frequency Resonant Operation High-voltage Packages Induction Heating Industrial Processes Insulated Gate Field Effect Transistors Integrated Gate-driver Circuitry Integrated Medium-voltage MOSFET Power Module Low Inductive Conductive Design Medium-voltage Silicon Carbide MOSFET Power Module Metal–oxide–semiconductor Field-effect Transistors MHz Resonant Operation Module MOSFET Die Power Module Package Power MOSFET Power Semiconductor Device Product Packaging Resonant Converter Resonant Power Converter Semiconductor Device Modelling Semiconductor Device Packaging SiC Silicon Compound Thermal Performance Vacuum Tubes Voltage 10.0 KV Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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