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| Content Provider | IET Digital Library |
|---|---|
| Author | Aslam, Mohd. Sharma, Dheeraj Yadav, Shivendra Soni, Deepak Sharma, Neeraj Gedam, Anju |
| Abstract | Abruptness at tunnelling junction is a vital issue with doped tunnel field-effect transistor (TFET) to achieve improved electrostatic characteristics. This task is more problematic for charge plasma TFET (CP-TFET) because of large tunnelling barrier at the channel/source interface. In this regard, an effective approach has already been employed through implantation of a horizontal metallic splint (HMS) inside the dielectric region near channel/source joint for improved electrical behaviour of CP-TFET. However, placement of a vertical metal splint (VMS) provides contact for HMS and gate electrode, which gives magnificent analogue/DC characteristics for newer structure. Combination of HMS and VMS (i.e. double metal splint (DMS)) increases electron density at channel/source junction for improved electron tunnelling rate compared with only HMS structure. In this regard, a complete comparative analysis of DMS CP TFET (DMS-CP-TFET) is performed between CP-TFET and HMS-CP-TFET. Furthermore, consequence of length and work-function variation of DMS and HMS on DC/RF parameters is investigated in device optimisation part of this work. |
| Starting Page | 123 |
| Ending Page | 128 |
| Page Count | 6 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 2, Feb (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/2 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5390 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-02-06 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Analogue-DC Characteristic Channel-source Interface Charge Plasma TFET DC-RF Parameter Design And Testing Dielectric Region DMS-CP-TFET Doped Tunnel Field-effect Transistor Double Metal Splint Electron Density Electron Tunneling Rate Electrostatic Characteristic Equivalent Circuit Field Effect Device Field Effect Transistors HMS Structure HMS-CP-TFET Horizontal Metallic Splint Insulated Gate Field Effect Transistors Low Work-function Metal Implantation Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Tunnel Transistors Tunnelling Barrier Vertical Metal Splint Work Function |
| Content Type | Text |
| Resource Type | Article |
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