NDLI: Design guidelines of tunnelling field-effect transistors for the suppression of work-function variation

Content Provider	IET Digital Library
Author	Choi, W. Y.
Abstract	Design guidelines to suppress the work-function variation (WFV) effects of tunnelling field-effect transistors (TFETs) have been discussed in comparison with metal–oxide–semiconductor FETs for the first time. The effects of metal-gate materials and their grain size on the WFV have been investigated. The simulation results show that the selection of appropriate gate material and the reduction of metal grain size are the effective solutions to the WFV of TFETs.
Starting Page	1819
Ending Page	1821
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 22, Oct (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.2625
Journal	Electronics Letters
Publisher Date	2015-10-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Design And Testing Equivalent Circuit Field Effect Device Field Effect Transistors Insulated Gate Field Effect Transistors Metal Grain Size Reduction Metal-gate Material Metal-oxide-semiconductor Field Effect Transistor MOSFET Semiconductor Device Modelling TFET Tunnel Transistors Tunnelling Field-effect Transistor WFV Effect Work Function Work-function Variation Suppression
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Design guidelines of tunnelling field-effect transistors for the suppression of work-function variation