NDLI: 6–18 GHz, 26 W GaN HEMT compact power-combined non-uniform distributed amplifier

Content Provider	IET Digital Library
Author	Kim, Jihoon Park, Hongjong Lee, Sangho Kim, Jaeduk Lee, Wangyong Lee, Changhoon Kwon, Youngwoo
Abstract	A 6–18 GHz gallium nitride (GaN) non-uniform distributed amplifier (NDA) monolithic microwave integrated circuit with high power density is implemented with compact four-way combined power. The drain lines and gate lines are shared among the combined NDAs. Sharing drain (or gate) lines reduces the drain (or gate) line length by half, while keeping the same characteristic impedances and eliminates bulky and lossy power combiners, such as Wilkinson combiners. The proposed four-way NDA was fabricated using a commercial 0.25 μm GaN high electron mobility transistor (HEMT) process. It shows average continuous wave output power of 20.8 W and average associated gain of 10.7 dB from 6 to 18 GHz under 33 V drain bias. When pulsed input power and pulsed DC bias are simultaneously supplied to the NDA, the output power increases to 26 W, on average. To the best of the authors’ knowledge, the highest RF power and power density among the reported GaN power amplifiers with an octave bandwidth higher than the Ku-band is represented in this work.
Starting Page	2040
Ending Page	2042
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 25, Dec (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/25
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.3524
Journal	Electronics Letters
Publisher Date	2016-11-14
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Bulky Power Combiners Combined NDA Compact Four-way Combined Power Distributed Amplifiers Drain Line Length Reduction Field Effect Integrated Circuit Field Effect MMIC Frequency 6 GHz to 18 GHz Gallium Compound Gallium Nitride Nonuniform Distributed Amplifier GaN Gate Line HEMT Compact Power-combined Nonuniform Distributed Amplifier HEMT Integrated Circuit High Electron Mobility Transistor III-V SemiConductor Lossy Power Combiners Microwave IC MMIC Power Amplifiers Monolithic Microwave Integrated Circuit Power 26 W Power Combiners Pulsed DC Bias Pulsed Input Power Waveguide And Microwave Transmission Line Component Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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