NDLI: Low-energy spin-orbit torque MTJ-based non-volatile flip-flop with data-aware backup technique

Content Provider	IET Digital Library
Author	Kang, G. Kim, Tae Wan Park, J.
Abstract	Spin-orbit torque magnetic tunnel junction (MTJ) based non-volatile flip-flops (NVFFs) have been introduced to provide zero-leakage standby state without data loss in power-gating mode. In this Letter, the data-aware backup scheme for NVFF, where significant energy can be saved by performing data backup only when the stored data and the current data are different is proprosed. Low-area backup signal generator is also proposed for the proposed data backup scheme. The simulation results with 65 nm process show 88.7% reduction in backup energy when the stored data and the current data are equal.
Starting Page	1178
Ending Page	1180
Page Count	3
ISSN	00135194
Volume Number	55
e-ISSN	1350911X
Issue Number	Issue 22, Oct (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/55/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2019.2059
Journal	Electronics Letters
Publisher Date	2019-09-12
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Backup Energy Data Backup Scheme Data-aware Backup Scheme Data-aware Backup Technique Energy Savings Flip Flops Logic And Switching Circuit Logic Circuit Low Power Electronics Low-area Backup Signal Generator Magnetic Circuit Magnetic Tunnelling Magnetoelectronics Memory Circuit MTJ-based NVFFs Power-gating Mode Random-access Storage Semiconductor Storage Size 65 Nm Spin-orbit Torque Magnetic Tunnel Junction Based Nonvolatile Flip-flops Stored Data Zero-leakage Standby State
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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