NDLI: Simple and accurate inductance model of 3D inductor based on TSV

Content Provider	IET Digital Library
Author	Wang, Fengjuan Yu, Ningmei
Abstract	The implementation of on-chip inductors in integrated circuit application remains a challenge to satisfy the requirements of high Q-factor, small area consumption, limited parasitic coupling, ease of layout, and manufacture. Fortunately, the emerging technology of through-silicon via (TSV) offers a possible solution to this issue by developing 3D inductor with solenoid architecture. A simple and accurate inductance model of 3D inductor based on TSV is exploited by analytical method. The inductance results obtained from the proposed model and finite element method exhibit good agreement with various design parameter ranges, and the errors between the results of the proposed analytical model and measurement are <7.5%, which verifies the accuracy of the model.
Starting Page	1815
Ending Page	1816
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 21, Oct (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/21
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.2241
Journal	Electronics Letters
Publisher Date	2016-09-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	3D Inductor Finite Element Analysis Finite Element Method Inductor Inductors And Transformer Integrated Circuit Application Integrated Circuit Modelling Layout Modelling And Testing On-chip Inductors Semiconductor Integrated Circuit Design Solenoid Architecture Solenoids Three-dimensional Integrated Circuit Through-silicon Via TSV
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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