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| Content Provider | IET Digital Library |
|---|---|
| Author | Kanehira, T. Imanishi, Y. Hayashi, H. Nakaoka, T. |
| Abstract | Harmonic resistive multipliers that exploit the unique current–voltage (I–V) characteristics of Ag/Ge–(Sb)–Te/Pt resistive-switching devices are demonstrated. For a Ge17Sb29Te54-based device, an antisymmetric non-linear I–V curve with a hump-like structure at ±0.4 V is obtained, whereas for a Ge51Te49-based device, an asymmetric non-linear I–V curve with SET switching at +0.4 V and RESET switching at –0.1 V is observed. The Ge17Sb29Te54-based device performs third harmonic multiplication for a 160 MHz input at 0 dBm, and sixth harmonic multiplication at 5 dBm under unbiased conditions without any matching circuit. For the latter device, biasing at a voltage of ±0.4 V leads to fifth harmonic multiplication, which is absent for a 0 dBm input under unbiased conditions. No harmonic multiplication is observed for an unbiased Ge51Te49-based device due to its high resistance, but biasing at the switching voltage of 0.4 V leads to fourth harmonic multiplication for a 0 dBm input. The unique non-linear characteristics of these devices suggest their potential for radio frequency applications. |
| Starting Page | 1811 |
| Ending Page | 1813 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 52 |
| e-ISSN | 1350911X |
| Issue Number | Issue 21, Oct (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/52/21 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2016.2016 |
| Journal | Electronics Letters |
| Publisher Date | 2016-09-20 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Antimony Compounds Current-voltage Characteristic Fifth Harmonic Multiplication Ge17Sb29Te54 Ge51Te49 Germanium Compound Harmonic Resistive Multipliers I-V Characteristic Memory Circuit Nonlinear Characteristic Radio Frequency Application RESET Switching Resistive RAM Resistive-switching Device Semiconductor Storage SET Switching Voltage -0.4 V Voltage 0.4 V |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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