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| Content Provider | IET Digital Library |
|---|---|
| Author | Zhao, Wen Sheng Sun, Lingling Yin, Wen Yan Guo, Yong Xin |
| Abstract | A submicron through-silicon carbon nanotube bundle via (TS-CNTBV) is characterised based on its equivalent circuit model. As the through-silicon vias (TSV) dimensions are scaled down to the nanoscale, it is proved that the single-walled carbon nanotube bundle can provide a better performance and reliability than the conventional metals, whereas the multiwalled carbon nanotube becomes unsuitable for the TSV applications. Both the metal-oxide-semiconductor and the temperature effects are considered and treated appropriately in the modelling of the TS-CNTBV. The process requirement and the energy delay product of the through-silicon-single-walled carbon nanotube bundle via are investigated, and the equivalent thermal conductivity of the silicon substrate with the TS-CNTBVs is obtained and analysed finally. |
| Starting Page | 123 |
| Ending Page | 126 |
| Page Count | 4 |
| Volume Number | 9 |
| e-ISSN | 17500443 |
| Issue Number | Issue 2, Feb (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/9/2 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2013.0553 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2014-02-17 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | 3D IC Carbon Nanotubes Design And Testing Electro thermal Modeling Equivalent Circuit Equivalent Circuit Model Layout Modelling And Testing Reliability Semiconductor Device Modelling Semiconductor Integrated Circuit Design Three-dimensional Integrated Circuit Through-silicon Carbon Nanotube Bundle Via TS-CNTBV TSV Dimension |
| Content Type | Text |
| Resource Type | Article |
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