NDLI: Robust fuzzy SRAM for accurate and ultra-low-power MVL and fuzzy logic applications

Content Provider	IET Digital Library
Author	Moonesan, M. Mirzaee, R. Faghih Daliri, M. Sam Navi, K.
Abstract	A fuzzy static RAM (SRAM) is proposed, which is applicable in fuzzy logic and many multiple-valued logic (MVL) applications. The new structure is basically an extension to the binary SRAM cell. Two cross-coupled voltage mirror circuits are used to be able to hold an arbitrary voltage value. The proposed design forms a robust and reliable structure, which is capable of operating with more than 95% accuracy in spite of imperfect fabrication of carbon nanotube FETs. Another exceptional advantage is its ultra-low-power consumption in MVL environments. It consumes 38.7 and 99% less static power compared with the SRAMs with regular ternary and quaternary components, respectively.
Starting Page	2032
Ending Page	2034
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 25, Dec (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/25
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.2932
Journal	Electronics Letters
Publisher Date	2016-11-14
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Binary SRAM Cell Carbon Nanotube FET Carbon Nanotube Field Effect Transistors Cross-coupled Voltage Mirror Circuit Digital Circuit Design, Modelling And Testing Formal Logic Fullerene Fuzzy Logic Fuzzy Logic Application Fuzzy Static RAM Integrated Circuit Design Logic And Switching Circuit Logic Circuit Low Power Electronics Memory Circuit Multiple-valued Logic Multivalued Logic Circuit Nanotube And Related Device Robust Fuzzy SRAM Semiconductor Storage SRAM Chips Ultra-low-power Consumption Ultra-low-power MVL Logic Application
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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