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Content Provider | IET Digital Library |
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Author | Yu, Xuming Sun, Huan Xu, Yuehang Hong, Wei |
Abstract | A C-band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5–6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm). |
Starting Page | 219 |
Ending Page | 221 |
Page Count | 3 |
ISSN | 00135194 |
Volume Number | 52 |
e-ISSN | 1350911X |
Issue Number | Issue 3, Feb (2016) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/52/3 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2015.3017 |
Journal | Electronics Letters |
Publisher Date | 2015-12-01 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Amplifiers C-band Gallium Nitride Power Amplifier MMIC Class-AB Gallium Nitride HPA MMIC Drain Voltage Frequency 5 GHz to 6 GHz Gain 25 DB Gallium Compound GaN Harmonic Tuned Approach III-V SemiConductor Integrated Circuit Design Layout Microwave IC MMIC Design MMIC Power Amplifiers Modelling And Testing Optimised Second Harmonic Impedance PAE Power 60 W Power-added Efficiency Pulse Width Second Harmonic Tuned Circuit Semiconductor Integrated Circuit Design Time 100 Mus Voltage 28 V Wide Band Gap SemiConductor |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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