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Content Provider | IET Digital Library |
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Author | Kumar, H. Kumar, Y. Singh, K. Kumar, S. Rawat, G. Kumar, C. Pal, B. N. Jit, S. |
Abstract | The kink effect at a very low voltage (∼1.15 V) region is reported in the electrical characteristics of a back-gated thin film transistor fabricated by embedding a TiO2 (T) layer between two Al2O3 (A) layers grown on a p-Si substrate using electron beam evaporation. A layer of ZnO quantum dots (QDs) deposited on the A–T–A structure by the sol–gel method is used for charge transportation between the source and drain electrodes grown on the ZnO QDs layer. The effect of TiO2 is analysed for the charge trapping and possible occurrence of the kink effect. |
Starting Page | 262 |
Ending Page | 264 |
Page Count | 3 |
ISSN | 00135194 |
Volume Number | 53 |
e-ISSN | 1350911X |
Issue Number | Issue 4, Feb (2017) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/53/4 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2016.3595 |
Journal | Electronics Letters |
Publisher Date | 2017-01-10 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | A-T-A Structure Al2O3-TiO2-Al2O3-ZnO Aluminium Compound Back-gated Thin Film Transistor Charge Transportation Charge Trapping Deposition from Liquid Phase (melts And Solutions) Drain Electrodes Electrical Characteristic Electron Beam Effect Electron Beam Evaporation Field Effect Device Kink Effect P-Si Substrate QD Layer Quantum Dot-based Thin Film Transistors Quantum Wells And Related Structure Semiconductor Quantum Dots Semiconductor Superlattices Sol Gel Method Sol Gel Processing Source Electrodes Thin Film Transistors Titanium Compound Zinc Compound |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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