NDLI: 69–78 GHz ESD-protected SiGe BiCMOS PA with 30 dB automatic level control for mm-wave 5G applications

Content Provider	IET Digital Library
Author	Wang, Keping Qiu, Lei Wang, Zhigong
Abstract	A silicon–germanium BiCMOS E-band power amplifier (PA) for millimetre-waves for Gbit/s data rates in fifth-generation cellular wireless backhaul networks is presented. A 69–78 GHz transmission-line PA is demonstrated by integrating an electrostatic discharge (ESD) and a power detector together. To save this area, a transmission-line-based power coupler is shared by the ESD and the power detector. The ESD achieves an insertion loss of <1.5 dB in the frequency range of 17–100 GHz. The linear-in-dB output characteristic of the power detector is achieved by an exponential voltage convertor. The designed PA measured a maximum gain of 18.6 dB with 3 dB bandwidth of 68.9–78.7 GHz. The input return loss is better than −10 dB from 50 to 81 GHz. It delivers 10 dBm saturated output power at 73.4 GHz. Transmission line pulsing (TLP) measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.
Starting Page	1286
Ending Page	1288
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 22, Nov (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.6575
Journal	Electronics Letters
Publisher Date	2018-09-21
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Analogue Circuit Design Automatic Level Control BiCMOS Analogue Integrated Circuit Cellular Radio Converter Current 10.0 A Data Rates Electrostatic Discharge Electrostatics ESD Current ESD-protected BiCMOS PA Exponential Voltage Converter Field Effect MIMIC Field Effect MMIC Fifth-generation Cellular Wireless Backhaul Network Frequency 17.0 GHz to 100.0 GHz Ge-Si Alloy Input Return Loss Insertion Loss Integrated Circuit Design Layout Linear-in-dB Output Characteristic Microwave IC Millimetre Wave Couplers Millimetre Wave Detector Millimetre Wave Frequency Converter Millimetre Wave Power Amplifiers Millimetre-Wave Mixed Technology Integrated Circuit Mm-wave 5G Application MMIC Frequency Converter MMIC Power Amplifiers Mobile Radio System Modelling Modelling And Testing Power Detector Semiconductor Integrated Circuit Design Semiconductor Material Sensing Device And Transducers SiGe Silicon–germanium BiCMOS E-band Power Amplifier Testing Transmission Line Transmission-line PA Transmission-line-based Power Coupler Voltage 6.0 V Waveguide And Microwave Transmission Line Component
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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