NDLI: Enhancement of electrical characteristics of a-ZTO TFTs based on channel layers produced with alternating precursor concentration

Content Provider	IET Digital Library
Author	Uprety, S. Hanggi, D. Yapabandara, K. Mirkhani, V. Khanal, M. P. Schoenek, B. Dhar, S. Park, M. Hamilton, M. Wang, S. Hames, W. E. Sk, M. H.
Abstract	The enhancement in electrical characteristics of the thin film transistors (TFTs) based on the mixed-stacked amorphous zinc tin oxide (a-ZTO) with an alternating precursor concentration is reported. The channel layers were deposited via sol–gel on oxidised p-Si. The source/drain ohmic contacts were prepared on the ZTO layer, constructing the bottom-gate TFTs. In this investigation, the TFTs with the following three channel layers were fabricated, and their characteristics were compared; (i) four layers produced from 0.05 M precursor solution, (ii) four layers produced from 0.2 M precursor solution, and (iii) four layers with alternating 0.05 and 0.2 M precursor solutions. It was found that the mobility (5.3 cm2/V s) of the TFT fabricated with the channel layers with alternating precursor concentration was higher than those with single concentration. Although the mechanism for this mobility enhancement is still being further analysed, it was conjectured that alternating precursor concentration might have reduced the trap density in the transistor channel and/or ZTO/SiO2 interfaces.
Starting Page	1298
Ending Page	1300
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 22, Nov (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.5734
Journal	Electronics Letters
Publisher Date	2018-09-26
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amorphous And Glassy Semiconductors Amorphous Semiconductors Bottom-gate TFTs Carrier Mobility Deposition from Liquid Phase (melts And Solutions) Electrical Characteristic Electrical Property of Amorphous And Glassy Semiconductors (thin Films/low-dimensional Structures) Epitaxy Field Effect Device Insulator Low-field Transport And Mobility Mixed-stacked Amorphous Zinc Tin Oxide Ohmic Contacts Piezoresistance Precursor Concentration Precursor Solution Semiconductor Semiconductor Thin Film Sol Gel Processing Source-drain Ohmic Contacts Structure Thin Film Growth Thin Film Transistors Tin Compound Transistor Channel Layer Trap Density Zinc Compound ZnSnO-SiO2-Si
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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