NDLI: Process compensated bipolar junction transistor-based CMOS temperature sensor with a ±1.5°C (3σ) batch-to-batch inaccuracy

Content Provider	IET Digital Library
Author	Sun, Dapeng Zhang, Tan Tan Law, Man Kay Mak, Pui In Martins, Rui Paulo
Abstract	A bipolar junction transistor (BJT)-based CMOS temperature sensor exploiting the piecewise BJT process spread compensation property of the base recombination current is proposed to reduce the process variations of the base–emitter voltage (V be). The weighted combinations of different on-chip resistors are explored to minimise their associated process spread. Fabricated in standard 0.18-μm CMOS, the chip prototype occupies an active area of 0.036 mm2 and draws 3 μA from a 1.2 V supply, with a measured maximum inter-/intra-die variation in V be of <1.5 mV from −40 to 125°C from two batches. Using the measured V be, ΔV be and the first-batch-only calibration parameters, the chip prototype demonstrates an untrimmed batch-to-batch inaccuracy of ± 1.5°C (3σ) within the same temperature range (24 samples from 2 batches).
Starting Page	1270
Ending Page	1272
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 22, Nov (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.6447
Journal	Electronics Letters
Publisher Date	2018-09-18
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Base Recombination Current Base–emitter Voltage Batch-to-batch Inaccuracy Bipolar Transistor Calibration CMOS Integrated Circuit CMOS Temperature Sensor Compensation Property Current 3.0 MuA First-batch-only Calibration Parameter Inter-die Variation Intra-die Variation On-chip Resistors Piecewise BJT Process Process Compensated BJT Resistor Sensing Device And Transducers Size 0.036 Mm Spread Compensation Property Temperature -40 DegC to 125 DegC Temperature Sonsor Voltage 1.2 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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