NDLI: SiGe BiCMOS high-gain and wideband differential intermediate frequency amplifier for W-band passive imaging single-chip receivers

Content Provider	IET Digital Library
Author	Reyaz, Shakila Bint Malmqvist, Robert Gustafsson, Andreas Kaynak, Mehmet
Abstract	This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T/f max. In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10–19.5 dB at 2–37 GHz (∣s11∣ and ∣s22∣ ≤ −10 dB at 7–40 GHz and 8–35 GHz, respectively), noise figure of 6.3–8.0 dB at 2–26 GHz and output third order intercept points of 7–17 dBm at 1–40 GHz (the DC power consumption is 122 mW). To the authors’ best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (∣s21∣ = 15–19.5 dB at 3–26 GHz).
Starting Page	569
Ending Page	575
Page Count	7
ISSN	17518725
Volume Number	9
e-ISSN	17518733
Issue Number	Issue 6, Apr (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/9/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2014.0511
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2014-11-21
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Analogue Circuit Design Bandwidth 3 GHz to 26 GHz BiCMOS Analogue Integrated Circuit BiCMOS High-gain Amplifier BiCMOS Process Technology Bipolar Integrated Circuit Bipolar MIMIC Broadband Amplifier Broadband RF Property Compact Circuit Size DC Power Consumption Differential IF Amplifier Down-conversion Receiver Front-end Frequency 2 GHz to 35 GHz Frequency 300 GHz Frequency 500 GHz Gain 10 DB to 19.5 DB Ge-Si Alloy IF Amplifier Circuit Design Inter-stage Matching Network Microwave IC Mixed Technology Integrated Circuit Modelling Noise Figure 6.3 DB to 8.0 DB On-chip Inductors Power 122 MW Radio Link And Equipment Radio Receiver Semiconductor Material SiGe Size 0.13 Mum Submicron Transistors Submillimetre Wave Amplifiers Testing W-band Passive Imaging Single-chip Receiver Wideband Amplifiers Wideband Differential Intermediate Frequency Amplifier
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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