NDLI: E-band power detector with robust temperature performance in 130 nm SiGe BiCMOS

Content Provider	IET Digital Library
Author	Wang, Chen Hou, Debin Chen, Jixin Hong, Wei
Abstract	This Letter presents an E-band power detector (PD) for robust operation throughout a wide temperature range. The PD is fabricated in a commercial 130 nm SiGe BiCMOS technology with f t/f max of 200/265 GHz. The relationship between responsivity of the PD and temperature was investigated. A set of target base bias voltages of the core heterojunction bipolar transistor (HBT) pair is deduced by simulating the PD circuit for an ideal constant responsivity over temperature. By means of fine control of the feedback resistor and HBT size of an improved current mirror, the bias voltages could be optimised to the target values. The measured detected RF power at 77 GHz exhibits <0.75 dB variation across − 40 to + 85°C, which is one of the lowest variation PDs in the published works. The PD consumes 2.5 mW from a 2.5 V supply and the core area is only 220 μm × 130 μm.
Starting Page	733
Ending Page	735
Page Count	3
ISSN	00135194
Volume Number	55
e-ISSN	1350911X
Issue Number	Issue 13, Jun (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/55/13
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.8236
Journal	Electronics Letters
Publisher Date	2019-05-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers BiCMOS Integrated Circuit Bipolar Transistor Circuit CMOS Integrated Circuit Commercial BiCMOS Technology Core Heterojunction Bipolar Transistor Pair Current Mirror Current Mirrors E-band Power Detector Feedback Feedback Resistor Field Effect MIMIC Frequency 200.0 GHz Frequency 265.0 GHz Frequency 77.0 GHz Ge-Si Alloy HBT Size Ideal Constant Responsivity Microwave IC Millimetre Wave Bipolar Transistors Millimetre Wave Detector Mixed Technology Integrated Circuit PD Circuit Power 2.5 MW Robust Temperature Performance Semiconductor Material Sensing Device And Transducers SiGe Size 130 Nm Solid State Microwave Circuit And Device Target Base Bias Voltage Temperature -40 DegC to 85 DegC Voltage 2.5 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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