NDLI: Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references

Content Provider	IET Digital Library
Author	Mattia, O. E. Klimach, H. Bampi, S.
Abstract	A novel resistorless bipolar junction transistor (BJT) bias and curvature compensation circuit for ultra-low-power CMOS bandgap voltage references (BGRs) is introduced. It works in the nanoampere current consumption range and under 1 V of power supply. The analytical behaviour of the circuit is described and simulation results for a 0.18 μm CMOS standard process are analysed. A junction voltage of 550 mV at room temperature is obtained (at an emitter current of 3.5 nA), presenting an almost linear temperature dependence, whereas the power consumption of the whole circuit is 3.4 nW under a 0.8 V power supply at 27°C. The estimated silicon area is 0.00135 mm2.
Starting Page	863
Ending Page	864
Page Count	2
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 12, Jun (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2013.3417
Journal	Electronics Letters
Publisher Date	2014-05-29
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	BGRs Bipolar Transistor Circuit Analytical Behaviour CMOS Integrated Circuit Compensation Current 3.5 NA Curvature Compensation Circuit Linear Temperature Dependence Low Power Electronics Nanoampere Current Consumption Range Power 3.4 NW Power Electronics Power Supply Reference Circuit Resistorless Bipolar Junction Transistor Resistorless BJT Bias Size 0.18 Mum Supervisory Circuit Temperature 27 DegC Temperature 293 K to 298 K Ultra-low-power CMOS Bandgap Voltage References Voltage 1 V Voltage 550 MV
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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