NDLI: Capacitor-reused CMOS temperature sensor with duty-cycle-modulated output and 0.38°C(3σ)inaccuracy

Content Provider	IET Digital Library
Author	Tang, Zhong Fang, Yun Yu, Xiaopeng Shi, Zheng Tan, Nianxiong
Abstract	A new bipolar junction transistor-based temperature sensor with duty-cycle-modulated output is presented. By employing a capacitor-reused voltage to the duty-cycle converter, the proposed design achieves both area and energy efficiencies simultaneously. The self-controlled chopping, dynamic element matching and digital-assisted calibration techniques are applied as well to further improve the accuracy. Fabricated in a standard 0.13 μm CMOS process, the proposed sensor achieves the measured 3 σ inaccuracy of 0.38 ∘ C from − 10 to 100 ∘ C after one-point calibration while occupying a silicon area of 0.073 mm2.
Starting Page	568
Ending Page	570
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 9, May (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/9
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.0555
Journal	Electronics Letters
Publisher Date	2018-03-27
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Area Bipolar Junction Transistor Bipolar Transistor Calibration Capacitor Capacitor-reused CMOS Temperature Sensor CMOS Integrated Circuit Digital-assisted Calibration Technique Duty-cycle Converter Duty-cycle-modulated Output Dynamic Element Matching Energy Efficiency Sensing Device And Transducers Size 0.13 Mum Temperature Sonsor Thermal Variables Measurement
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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