NDLI: Design of a 56 Gbit/s 4-level pulse-amplitude-modulation inductor-less vertical-cavity surface-emitting laser driver integrated circuit in 130 nm BiCMOS technology

Content Provider	IET Digital Library
Author	Belfiore, Guido Szilagyi, Laszlo Henker, Ronny Jörges, Udo Ellinger, Frank
Abstract	This paper presents the design and analysis of a 4-level pulse-amplitude-modulation (4-PAM) 56 Gbit/s vertical-cavity surface-emitting laser (VCSEL) driver integrated circuit (IC) for short range, high speed and low power optical interconnections. An amplitude modulated signal is necessary to overcome the bottleneck of speed given by the actual VCSELs and decrease the power consumption per bit. A prototype IC is developed in a standard 130 nm BiCMOS technology. The circuit converts two single-ended input signals to a 4-level signal fed to the laser. The driver also provides the DC current and the voltage necessary to bias the VCSEL. The power dissipation of the driver is only 115 mW including both the VCSEL and the 50 Ω input single-to-differential-ended converters. To the author's knowledge this is the first 56 Gbit/s 4-PAM laser driver implemented in silicon with a power dissipation per data-rate (DR) of 2.05 mW/Gbit/s including the VCSEL making it the most power efficient, 56 Gbit/s, common cathode laser driver. The active area occupies 0.056 mm2. The small signal bandwidths are 49 GHz for the high and 43 GHz for the low amplitude amplification path, when the VCSEL is not connected. The bit error rate was tested electrically showing and error free connection at 28 GBaud/s.
Starting Page	213
Ending Page	220
Page Count	8
ISSN	1751858X
Volume Number	9
e-ISSN	17518598
Issue Number	Issue 3, May (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/9/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2014.0240
Journal	IET Circuits, Devices & Systems
Publisher Date	2015-05-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	4-level Pulse-amplitude-modulation Bandwidth 43 GHz Bandwidth 49 GHz BiCMOS Integrated Circuit BiCMOS Technology Bit Error Rate Bit Rate 56 Gbit/s Common Cathode Laser Driver DC Current Driver Circuit Elemental Semiconductor Error Statistics Inductorless Vertical-cavity Surface-emitting Laser Driver Integrated Circuit Input Single-to-differential-ended Converter Integrated Circuit Design Integrated Circuit Interconnections Lasing Action in SemiConductor Layout Low Power Electronics Low Power Optical Interconnection Metallisation And Interconnection Technology Microwave IC Millimetre Wave Integrated Circuit Mixed Technology Integrated Circuit Modelling And Testing Optical Interconnections Power 115 MW Power Consumption Power Converter Power Dissipation Power Electronics Power Supply Probability Theory Pulse Amplitude Modulation Resistance 50 Ohm Semiconductor Integrated Circuit Design Semiconductor Laser Silicon Single-ended Input Signal Size 130 Nm Statistics Stochastic Linearised SCUC Supervisory Circuit Surface Emitting Laser Diode VCSEL
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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