NDLI: The effect of sputtering bias on the composition and microstructure ZrSiN diffusion barrier films

Content Provider	IEEE Xplore Digital Library
Author	Zhongxiao Song Chunliang Liu Kewei Xu
Copyright Year	2004
Description	Author affiliation: Key Lab. for Phys. Electron. & Devices Minist. of Educ., Xi'an Jiaotong Univ., China (Zhongxiao Song; Chunliang Liu)
Abstract	Zr-Si-N diffusion barriers were sputtered by RF reactive magnetron sputtering with different bias voltages. The Cu films were subsequently sputtered onto the Zr-Si-N films without breaking vacuum. Energy dispersive X-ray spectroscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, atomic force microscope, Auger electron spectroscopy, and four-point probe method were employed to characterize the microstructure and properties of the Zr-Si-N films. The results reveal that as the bias voltage increases the Zr/Si ratio and the surface roughness increase, but the resistivity of the film decreases. High sputtering bias is in favor of the growth of ZrN grains in the Zr-Si-N film. With the decrease of sputtering bias the microstructure of Zr-Si-N film changes from the composite that consists of nano-grain ZrN and amorphous SiN/sub x/ to the composite that consists of amorphous ZrN and SiN/sub x/ phases.
Starting Page	334
Ending Page	336
File Size	175937
Page Count	3
File Format	PDF
ISBN	0780384377
DOI	10.1109/IVESC.2004.1414265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-06
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon compounds Radio frequency Spectroscopy Atomic force microscopy Transmission electron microscopy Photoelectron microscopy Voltage Amorphous materials Microstructure Sputtering
Content Type	Text
Resource Type	Article

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