NDLI: The effect of surface sp2/sp3 bonding ratios of carbon films on the field emission property

Content Provider	IEEE Xplore Digital Library
Author	Zhanling Lu Binglin Zhang Ning Yao Xinyue Zhang Bingxian Ma Zhiqin Fan
Copyright Year	2004
Description	Author affiliation: Dept. of Phys., Zhengzhou Univ., China (Zhanling Lu; Binglin Zhang; Ning Yao; Xinyue Zhang; Bingxian Ma; Zhiqin Fan)
Abstract	Summary form only given. Amorphous carbon films were deposited on Si substrates by using microwave plasma chemical vapor deposition (MPCVD). It is often noted that a conditioning of carbon film is required before the onset of reproducible field emission. It involves the cycling of the voltage up and down over several cycles etc, which may be accompanied by surface damage and phase changing. The exact nature of this conditioning step and the role of the damage-induced surface structure is not fully understood. In this paper, the change of surface bonding structure by cycling of the voltage up and down, and the effect of sp2/sp3 bonding ratios of the carbon films on field emission are investigated. The surface microstructure and sp2/sp3 bonding ratios were analyzed by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Field emission measurements of the films were carried out in a vacuum chamber with a base pressure of below 5/spl times/10-5Pa. The surface bonding structure of the as-deposited film was mainly sp2 component before doing field emission measurement. After emission conditioning treatment by cycling of the voltage up and down over several cycles, the surface sp2/sp3 bonding ratio of 1.25 was got, and the I-V characteristic of the field emission was getting reproducible and stable. The current density of 0.28 mA/cm/sup 2/ was obtained at electric field of 4.8 V//spl mu/m. When the electric field was increased to 6.85 V//spl mu/m, the current density was dramatically decreased to 0.067 mA/cm/sup 2/, and the surface sp2/sp3 bonding ratio was decreased to 0.53. It was revealed that surface sp2 phase in amorphous carbon films may be the main factor in obtaining low turn-on field and high current density.
File Size	50518
File Format	PDF
ISBN	0780384377
DOI	10.1109/IVESC.2004.1414145
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-06
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Scanning electron microscopy Semiconductor films Raman scattering Carbon dioxide Voltage Amorphous materials Bonding Current density Surface treatment
Content Type	Text
Resource Type	Article

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