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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Orlova, K.N. Gradoboev, A.V. Asanov, I.A. |
| Copyright Year | 2012 |
| Description | Author affiliation: Research Institute of semiconductor devices, Tomsk Russian Federation (Asanov, I.A.) || Yurga Institute of Technology, Tomsk Polytechnic University, Yurga Russian Federation (Orlova, K.N.; Gradoboev, A.V.) |
| Abstract | Gamma degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 590 nm region. The process of degradation light output power is shown in two stages. Light-current and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells has possible to distinguished areas of weak and strong injection of electrons into the active region of the diodes by measuring light output. The value of the light output power of LEDs irradiated $^{60}Co$ gamma-rays in a passive mode decreases with increasing radiation dose, while power of degradation of light output is directly proportional to dose and fluency and is inversely proportional to the operating current at which it measured. With reduction of radiation dose differences between the region of strong injection and weak injection increases. Comparison of the research results made of different semiconductor structures suggests that the stages of degradation processes is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 681474 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467317726 |
| e-ISBN | 9781467317733 |
| DOI | 10.1109/IFOST.2012.6357528 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-09-18 |
| Publisher Place | Russia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation light-emitting diodes with quantum wells Radiation effects Semiconductor device measurement Radiative recombination radiation sensitivity AlGaInP heterostructures Light emitting diodes Semiconductor diodes Power generation |
| Content Type | Text |
| Resource Type | Article |
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