NDLI: Reliable area index: A novel approach to measure reliability of Markov Random Field based circuits

Content Provider	IEEE Xplore Digital Library
Author	Anwer, J. Shaukat, S.F. Khalid, U. Hamid, N.H.
Copyright Year	2012
Description	Author affiliation: Electrical Engineering Department, COMSATS Institute of Information Technology, Defense Road, Off-Raiwand Road, Lahore, Pakistan (Anwer, J.; Shaukat, S.F.) \|\| Electrical & Electronics Engineering Department, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Tronoh, Perak, Malaysia (Khalid, U.; Hamid, N.H.)
Abstract	Markov Random Field (MRF) is a probabilistic circuit design approach that transforms simple CMOS to MRF-CMOS digital circuits. The transformed circuits are proved to be extremely noise-tolerant in the previous research literature. In this paper, we have quantified the noise tolerance capability of MRF circuits as compared to CMOS counterparts. The tradeoff for this noise-immunity is the increase in transistor-count of the circuit. This tradeoff is modelled by a novel factor in this research work called as ‘reliable area index’. The results show that the value of this index is 30 times higher for MRF than CMOS which proves that the MRF design approach still maintains a suitable tradeoff between noise-tolerance and area overhead of the circuit.
Starting Page	851
Ending Page	853
File Size	63861
Page Count	3
File Format	PDF
ISBN	9781457719684
e-ISBN	9781457719677
DOI	10.1109/ICIAS.2012.6306133
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-12
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise CMOS technology CMOS integrated circuits Circuit synthesis Indexes Integrated circuit reliability
Content Type	Text
Resource Type	Article

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