NDLI: Investigations of analog/RF performance for underlap graphene nano-ribbon field effect transistor (GNRFET)

Content Provider	IEEE Xplore Digital Library
Author	Alam, M.S. Barik, A. Armstrong, G.A.
Copyright Year	2012
Description	Author affiliation: Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India (Alam, M.S.; Barik, A.) \|\| Semicond. & Nanotechnol. Centre, Queen's Univ. of Belfast, Belfast, UK (Armstrong, G.A.)
Abstract	Single gate and double gate GNRFETs with 5-20% doping of potassium (K) in source (S), drain (D) and channel region having width (W)=2 and 5 nm have been synthesized. On-to-off current ratio (Ion/Ioff) and sub-threshold swing (S) for single gate GNRFET having W=2nm with 10% of K doping have been found to be ~10 and ~20mV/dec, respectively whereas these value for double gate have been found ~10 and ~17mV/dec. Intrinsic speed $(f_{S})$ and intrinsic gain $(A_{V})$ have been calculated as ~12 THz and 20, respectively (at low bias of gate-to-source voltage, $V_{G}S$ = 0.1 V and drain-to-source voltage, $V_{DS}$ = 0.1 V), for single gate configuration. However, for double gate, $A_{V}$ becomes ~2.5 times higher but $f_{S}$ is reduce by ~20%. Furthermore, the device follows a square-law, which would greatly suppress odd-order harmonics and improves dynamic range in designing of low power communication system. Using a new figure-of-merit (FoM) involving $A_{V},$ $f_{S},$ dynamic power $(P_{DYN})$ and off state leakage power (Poff) consumption, it has been found that double gate GNRFET gives significant advantage over carbon nano-tubes (CNTs) FET and single gate GNRFET having similar dimensions. The on current $I_{ON}$ and $f_{S}$ compare very favorably with both current International Technology Roadmap for Semiconductors (ITRS) Road Map specifications and available experimental results for GNRFET.
Sponsorship	IEEE
Starting Page	49
Ending Page	53
File Size	345544
Page Count	5
File Format	PDF
ISBN	9781467328715
e-ISBN	9781467328715
DOI	10.1109/NMDC.2012.6527600
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	grapheme nano-ribbon nanotechnology atomistic tool Underlap design performance investigation
Content Type	Text
Resource Type	Article

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