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A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

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A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

Content Provider	IEEE Xplore Digital Library
Author	Ying-Yu Chen Sangai, A. Rogachev, A. Gholipour, M. Iannaccone, G. Fiori, G. Deming Chen
Copyright Year	2002
Abstract	This paper presents the first parameterized SPICE-compatible compact model of a graphene nano-ribbon field-effect transistor (GNRFET) with doped reservoirs, also known as MOS-type GNRFET. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, line edge roughness, and doping level in the reservoirs are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that line edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications.
Sponsorship	IEEE Nanotechnology Council
Starting Page	1068
Ending Page	1082
Page Count	15
File Size	1102475
File Format	PDF
ISSN	1536125X
Volume Number	14
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Graphene Mathematical model SPICE Field effect transistors model graphene graphene nano-ribbon GNRFET transistor
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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