NDLI: Graphene for metal-semiconductor Ohmic contacts

Content Provider	IEEE Xplore Digital Library
Author	Kyung-Eun Byun Seongjun Park Heejun Yang Hyun-Jong Chung Hyun Jae Song Jaeho Lee Seo, D.H. Jinseong Heo Dongwook Lee Hyeon Jin Shin Yun Sung Woo
Copyright Year	2012
Description	Author affiliation: Samsung Adv. Inst. of Technol., Yongin, South Korea (Kyung-Eun Byun; Seongjun Park; Heejun Yang; Hyun-Jong Chung; Hyun Jae Song; Jaeho Lee; Seo, D.H.; Jinseong Heo; Dongwook Lee; Hyeon Jin Shin; Yun Sung Woo)
Abstract	One of the key components of modern device structures is the metal-semiconductor (MS) contact with low symmetric contact resistance. We report on a MS contact structure utilizing graphene insertion. In this strategy, graphene reduces or even eliminates in ideal conditions, the Fermi-level pinning at a MS junction. Since the metal, Ni, deposited on graphene reduced the work function of graphene, the doped graphene was able to lower the Schottky barrier at the MS junction. The Schottky barrier height of metal-graphene-Si (MGS) junction was obtained from temperature dependent I-V characteristics. We confirmed that the graphene doped with Ni reduced the Schottky barrier height from 0.67 eV to 0.20 eV in wafer scale test. We also demonstrated the formation of an ideal MGS Ohmic contact via conductive atomic force microscopy. The contact resistance of the ideal MGS was less than $1.0×10^{-6}$ Ω $cm^{2}$ with low doped Si $(10^{15}$ $cm^{3}).$ The resistance is comparable to that of a current device contact with highly doped Si. Since it only requires the insertion of a single layer of graphene, this method can be directly applied to the current Si technology to reduce the contact resistance at MS junctions.
Sponsorship	IEEE
Starting Page	63
Ending Page	66
File Size	419071
Page Count	4
File Format	PDF
ISBN	9781467328715
e-ISBN	9781467328715
DOI	10.1109/NMDC.2012.6527583
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article

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