NDLI: The nano-scale resistive memory effect of graphene oxide

Content Provider	IEEE Xplore Digital Library
Author	Wei, H.Q. Zhou, P. Sun, Q.Q. Wang, L.H. Geng, Y. Zhang, D.W. Wang, X.B.
Copyright Year	2012
Description	Author affiliation: Sch. of Mater. Sci. & Eng., Hubei Univ., Wuhan, China (Wang, X.B.) \|\| ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China (Wei, H.Q.; Zhou, P.; Sun, Q.Q.; Wang, L.H.; Geng, Y.; Zhang, D.W.)
Abstract	An attractive+ to graphene for a range of applications is graphene oxide (GO). GO is an insulator because of the hydroxyl, carboxyl, carbonyl and epoxide functional groups presenting on the basal surface or edge and becomes a semiconductor or semimetal as it is reduced back toward graphene. Here we demonstrate that graphene oxide can be reversibly reduced and oxidized in nanometer-scale by applying bias voltages by the nano-tip of conductive atomic force microscopy system. The low resistance state (LRS) when reduced and a high resistance state (HRS) when oxidized can be achieved under the opposite applied bias direction. The LRS (around 10 KΩ and HRS (around 40 M Ω) were stable for more than $10^{3}$ s, and no obvious degradation was observed during the tests. Threshold voltages for reduction and oxidation, which can be considered as the set and reset voltages is around -6.5 V and +7 V, respectively. It is shown that the hydrogen (H+) ions and hydroxyl ions (OH-) dissociated from the water meniscus formed between the tip and GO in ambient condition at room temperature plays an essential role in the resistive memory switching. It is also found that the negative bias is responsible for the reduction, which is related the transition from HRS to LRS, and the positive bias is responsible for the oxidation, which is related the transition from LRS to HRS, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy is performed to confirm this resistive memory switching behaviors.
Sponsorship	IEEE
Starting Page	54
Ending Page	57
File Size	352539
Page Count	4
File Format	PDF
ISBN	9781467328715
e-ISBN	9781467328715
DOI	10.1109/NMDC.2012.6527574
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article

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