NDLI: Assembly technique and charaterizaion for the nanodevice using dielectrophoresis

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The trends and future prospects of nano technology development and deployment in Korea

Perspective of nano technology in semiconductor industry

Nanoelectronic materials and devices as new opportunity

3-D silicon technology for nano-electronics

High performance CMOS device technologies in nano CMOS era

Nano-CMOS scaling: Novel devices and materials

Nanoelectronics devices for the end of the roadmap and beyond

Energy constrained limits to operation and assembly of information processing systems: Lessons for directions of nanoscale systems

High pressure deuterium annealing effect on nano- scale CMOS devices with different channel width

Orbital quantum bit in Si quantum dots

Rapid fabrication of functional CNT sensor arrays using micro-spotting and DEP technologies

Counting statistics of single electron transport through a double quantum dot

Fabrication of 35-nm zigzag T-gate Al0.25Ga0.75As/In{0.2}Ga{0.8}As/GaAs pHEMTs

A new resistive probe with higher resolution

Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

Faraday’s induction in nano-transformer

Epitaxy and devices for InP digital photonic integrated circuits

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Effects of electronic quantum interference, photonic-crystal cavity, longitudinal field and surface-plasmon-polariton for optical amplification

PQR laser can outdo LED

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Plasmonic phenomena in metal nanoapertures and chip-scale instrumentation for biochemical sensing

Carbon nanostructures as interconnect and interface materials

Switching characteristics in the ferroelectric organic molecular memories

Development of molecular logic array and memory device

Organic memory device using tailored nanostructure of conducting polymer

Investigation of device parameters for field-effect DNA-sensors by three-dimensional simulation

Electrode-molecule interface effects on molecular conductance

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Electrical properties of carbon films by electrolysis method

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Spin transfer enhancement and switching behavior in exchange bias spin valves

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Assembly technique and charaterizaion for the nanodevice using dielectrophoresis

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Characterization of magnetic nanoparticles synthesized by sonomechanical method

Effect of intervening ferromagnet on spin accumulation in Py/Au/Py spin valve device

Spin transfer torque in nanopillar spin-valve with [CoFe/Pd]2 double free-layers

Continuous vortex wall motion induced by adiabatic spin torque

Micromagnetic simulations on current-driven domain depinning

Magnetoresistance in doble-wall carbon nanotubes contacted by ferromagnetic electrodes

Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

Negatice resistance in a magnetic barrier device

Characterization of domain switching behavior of MTJ cells using magnetic force microscopy(MFM) and H-R loop analysis

Room-temperature ferromagnetism in diluted magnetic zinc oxide semiconducting nanomaterials

Spin filter behaviour of atomic NiO chains in Ni nanocontacts

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The application of atomic layer deposition for transparent thin film transistor

Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate

Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding

Pulsed laser deposited LiNi0.5Mn0.5O2 thin films on the Pt(200)/TiO2/SiO2/Si substrates for lithium-ion battery application

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Characterization and fabrication of alkyl urethane acrylate oligomers for UV curable coating agents

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A magnetic behavior of α-Fe nanoparticle

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Reduction diffusion process for preparation of Nd-Fe-B based alloy

FePt magnetic material synthesis by electrochemical methods

Synthesis and characterization of well dispersed electronic ink particles for electronic paper

Fabrication of functional microcapsules containing two-phase suspensions for microparticle-based displays

Solar cell surface texturing using a micro-blaster etching technique

Preparation and characterization of Ag/SiO2 core/shell type nanoparticles

A study on magnetic property loss of Nd-Fe-B permanent magnet by γ-ray irradiation

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ZnO nanostructures synthesized with/without catalyst by metalorganic chemical vapor deposition

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Magnetic properties of Ag doped BiSrCaCuO oxides using thermal pylolysis method

Electrical and structural properties of PZT/ST films

Effect of the thermal distribution for ZnO nano-powder Bi-based varistors

Study on charge trap layer in nanocrystal charge trap MOSFET

Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

Fabricated Si nanowire using nanoimprint method

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Characterization of Pd-nanocrystal-based nonvolatile memory devices

Structural and compositional characteristics of nanocrystalline nichrome thin film as anode for lithium battery

Preparation, growth mechanism and chemical compositional analysis of nanocrystalline [Sb2(S1−x ,SEx)3 ] thin films using arrested precipitation technique (APT)

Magnetic dependence of cyclotron transition absorption in piezoelectric materials based on the quantum transport theory

Thermal properties of quantum transition process in piezoelectric materials based on the projected Liouville equation.

Growth and annealing temperature dependences of epitaxial ZnO thin films for optoelectronic applications

Assembly technique and charaterizaion for the nanodevice using dielectrophoresis

Content Provider	IEEE Xplore Digital Library
Author	Hee Won Seo Jong-Hong Lee Jin-Won Song Chang-Soo Han
Copyright Year	2006
Description	Author affiliation: Korea Inst. of Machinery & Mater., Daejeon (Hee Won Seo; Jong-Hong Lee; Jin-Won Song; Chang-Soo Han)
Abstract	We report the assembly for the fabrication of nanodevices using nanowires (NWs). The nanowires were individually assembled using an experimental approach based on the dielectrophoretic force equation. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of nanodevices. We used control the thickness of the bottom electrode for the suspension from the bottom electrode. We found that their conductivities in nanodevices were remarkably increased along with the increase of the suspension height.
Starting Page	466
Ending Page	467
File Size	526294
Page Count	2
File Format	PDF
ISBN	9781424405404
DOI	10.1109/NMDC.2006.4388819
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-22
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gold Conductivity Gallium nitride Equations Electrodes dielectrophoresis Frequency Nanowires Dielectrophoresis Assembly FETs FIB suspension nanowire
Content Type	Text
Resource Type	Article

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