NDLI: Enhancement of PL intensity by photonic crystal fabricated on GaAs substrate using nanoporous alumina mask

Content Provider	IEEE Xplore Digital Library
Author	Mi Jung Seok Lee Min Chul Park Young Tae Byun Young Min Jhon Sun Ho Kim Sun-il Mho Keunjoo Kim Deok Ha Woo
Copyright Year	2006
Description	Author affiliation: Photonics Res. Center, KIST, Seoul (Mi Jung; Seok Lee; Min Chul Park; Young Tae Byun; Young Min Jhon; Sun Ho Kim)
Abstract	We fabricated photonic crystal structure on GaAs substrate using nanoporous alumina mask. Uniform arrays of nano-sized pores produced in anodic alumina were transferred into GaAs substrate by inductively coupled plasma reactive ion etching (ICP-RIE). The photonic crystal structure, the nanohole array with uniform diameter of 60 nm and interpore distance of 105 nm, was formed on GaAs substrate as replica of the alumina mask. Its photoluminescence (PL) showed enhanced intensity compared with that from GaAs substrate without its structure. The ICP-RIE technique using nanoporous alumina mask can be used as a prospective method in the fabrication of nano-devices for nanotechnology.
Starting Page	436
Ending Page	437
File Size	370508
Page Count	2
File Format	PDF
ISBN	9781424405404
DOI	10.1109/NMDC.2006.4388804
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-22
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Photonic crystals Light emitting diodes Nanoporous materials Etching Optical pumping Nanostructures Substrates ICP-RIE Fabrication photonic crystal Argon PL nanoporous alumina
Content Type	Text
Resource Type	Article

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