NDLI: Thickness dependent properties of nanocryastalline Sb2S3 electrode

Content Provider	IEEE Xplore Digital Library
Author	Patil, V. Patil, A. Ji-Won Choi Yoon Seok Jin
Copyright Year	2006
Description	Author affiliation: Korea Inst. of Sci. & Technol., Seoul (Patil, V.; Patil, A.; Ji-Won Choi; Yoon Seok Jin)
Abstract	$Sb_{2}S_{3}$ thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was $n-Sb_{2}S_{3}$ / 0.25 M NaOH-0.25 $Na_{2}S$ -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the $Sb_{2}S_{3}$ thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.
Starting Page	172
Ending Page	173
File Size	279045
Page Count	2
File Format	PDF
ISBN	9781424405404
DOI	10.1109/NMDC.2006.4388732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-22
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic systems Grain size Glass Solar power generation Sputtering Chemicals Substrates PEC Thickness Bismuth Capacitance Thin Film Electrode Transistors
Content Type	Text
Resource Type	Article

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